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IPI029N06NAKSA1

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IR (Infineon Technologies) IPI029N06NAKSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPI029N06NAKSA1
Description
MOSFET N-CH 60V 24A/100A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPI029N06NAKSA1 PDF
IPI029N06NAKSA1 Tech Specifications
SeriesOptiMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.8V @ 75µA
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 30 V
FET Feature-
Power Dissipation (Max)3W (Ta), 136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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