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TPN4R806PL,L1Q

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Toshiba Electronic Devices and Storage Corporation TPN4R806PL,L1Q

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TPN4R806PL,L1Q
Description
MOSFET N-CH 60V 72A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TPN4R806PL,L1Q PDF
TPN4R806PL,L1Q Tech Specifications
SeriesU-MOSIX-H
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2770 pF @ 30 V
FET Feature-
Power Dissipation (Max)630mW (Ta), 104W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN
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