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2SK2009TE85LF

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Toshiba Electronic Devices and Storage Corporation 2SK2009TE85LF

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
2SK2009TE85LF
Description
MOSFET N-CH 30V 200MA SC59-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
2SK2009TE85LF PDF
2SK2009TE85LF Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V
Rds On (Max) @ Id, Vgs2Ohm @ 50MA, 2.5V
Vgs(th) (Max) @ Id1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds70 pF @ 3 V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-59-3
Package / CaseTO-236-3, SC-59, SOT-23-3
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Request Quote Now

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