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VS-GB200TH120N

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Vishay General Semiconductor – Diodes Division VS-GB200TH120N

Manufacturer :
Vishay General Semiconductor – Diodes Division
Mfr. Part # :
VS-GB200TH120N
Description
IGBT MOD 1200V 360A INT-A-PAK
Catalog
Transistors - IGBTs - Modules
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
VS-GB200TH120N PDF
In Stock
727
VS-GB200TH120N Tech Specifications
Series-
PackageBulk
Part StatusObsolete
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)360 A
Power - Max1136 W
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 200A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce14.9 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseDouble INT-A-PAK (3 + 4)
Supplier Device PackageDouble INT-A-PAK
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Request Quote Now

We can supply VS-GB200TH120N, use the request quote form to request VS-GB200TH120N pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number VS-GB200TH120N. The price and lead time for VS-GB200TH120N depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# VS-GB200TH120N. We look forward to working with you to establish long-term relations of cooperation.

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