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QJD1210011

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Powerex, Inc. QJD1210011

Manufacturer :
Powerex, Inc.
Mfr. Part # :
QJD1210011
Description
MOSFET 2N-CH 1200V 100A SIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
QJD1210011 PDF
In Stock
381
QJD1210011 Tech Specifications
Series-
PackageBulk
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 100A, 20V
Vgs(th) (Max) @ Id5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds10200pF @ 800V
Power - Max900W
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule
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