Series | - | |
Package | Bulk | |
Part Status | Active | |
FET Type | 2 N-Channel (Dual), Schottky | |
FET Feature | Silicon Carbide (SiC) | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Current - Continuous Drain (Id) @ 25°C | 337A (Tc) | |
Rds On (Max) @ Id, Vgs | 11mOhm @ 180A, 20V | |
Vgs(th) (Max) @ Id | 3V @ 9mA | |
Gate Charge (Qg) (Max) @ Vgs | 1224nC @ 20V | |
Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 1000V | |
Power - Max | 2140W | |
Operating Temperature | -40°C ~ 175°C (TJ) | |
Mounting Type | Chassis Mount | |
Package / Case | Module | |
Supplier Device Package | Module |
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