Series | - | |
Package | Tube | |
Part Status | Obsolete | |
FET Type | - | |
Technology | SiC (Silicon Carbide Junction Transistor) | |
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) | |
Drive Voltage (Max Rds On, Min Rds On) | - | |
Rds On (Max) @ Id, Vgs | 415mOhm @ 4A | |
Vgs(th) (Max) @ Id | - | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | - | |
Input Capacitance (Ciss) (Max) @ Vds | 324 pF @ 35 V | |
FET Feature | - | |
Power Dissipation (Max) | 125W (Tc) | |
Operating Temperature | -55°C ~ 225°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-276 | |
Package / Case | TO-276AA |
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