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JAN2N6766T1

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Microsemi JAN2N6766T1

Manufacturer :
Microsemi
Mfr. Part # :
JAN2N6766T1
Description
MOSFET N-CH 200V 30A TO254AA
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
JAN2N6766T1 PDF
In Stock
847
JAN2N6766T1 Tech Specifications
SeriesMilitary, MIL-PRF-19500/543
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-254AA
Package / CaseTO-254-3, TO-254AA (Straight Leads)
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