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SI1002R-T1-GE3

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Vishay / Siliconix SI1002R-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI1002R-T1-GE3
Description
MOSFET N-CH 30V 610MA SC75A
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI1002R-T1-GE3 PDF
In Stock
821
SI1002R-T1-GE3 Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C610mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs560mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds36 pF @ 15 V
FET Feature-
Power Dissipation (Max)220mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-75A
Package / CaseSC-75A
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