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FQE10N20LCTU

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Sanyo Semiconductor/ON Semiconductor FQE10N20LCTU

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FQE10N20LCTU
Description
MOSFET N-CH 200V 4A TO126-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQE10N20LCTU PDF
In Stock
833
FQE10N20LCTU Tech Specifications
SeriesQFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V
FET Feature-
Power Dissipation (Max)12.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-126-3
Package / CaseTO-225AA, TO-126-3
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