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TSM10N60CI C0

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TSC (Taiwan Semiconductor) TSM10N60CI C0

Manufacturer :
TSC (Taiwan Semiconductor)
Mfr. Part # :
TSM10N60CI C0
Description
MOSFET N-CH 600V 10A ITO220
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TSM10N60CI C0 PDF
TSM10N60CI C0 Tech Specifications
Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45.8 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1738 pF @ 25 V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220
Package / CaseTO-220-3 Full Pack, Isolated Tab
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