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RN1101MFV,L3F(CT

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Toshiba Electronic Devices and Storage Corporation RN1101MFV,L3F(CT

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
RN1101MFV,L3F(CT
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RN1101MFV,L3F(CT PDF
In Stock
1905
RN1101MFV,L3F(CT Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150 mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM
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