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GA50JT06-258

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GeneSiC Semiconductor GA50JT06-258

Manufacturer :
GeneSiC Semiconductor
Mfr. Part # :
GA50JT06-258
Description
TRANS SJT 600V 100A TO258
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
GA50JT06-258 PDF
In Stock
953
GA50JT06-258 Tech Specifications
Series-
PackageBulk
Part StatusActive
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs25mOhm @ 50A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)769W (Tc)
Operating Temperature-55°C ~ 225°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-258
Package / CaseTO-258-3, TO-258AA
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Request Quote Now

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