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FDB1D7N10CL7

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Sanyo Semiconductor/ON Semiconductor FDB1D7N10CL7

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FDB1D7N10CL7
Description
MOSFET N-CH 100V 268A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDB1D7N10CL7 PDF
In Stock
603
FDB1D7N10CL7 Tech Specifications
SeriesPowerTrench®
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C268A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 15V
Rds On (Max) @ Id, Vgs1.65mOhm @ 100A, 15V
Vgs(th) (Max) @ Id4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs163 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11600 pF @ 50 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
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