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TK090N65Z,S1F

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Toshiba Electronic Devices and Storage Corporation TK090N65Z,S1F

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK090N65Z,S1F
Description
MOSFET N-CH 650V 30A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK090N65Z,S1F PDF
In Stock
818
TK090N65Z,S1F Tech Specifications
SeriesDTMOSVI
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs90mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2780 pF @ 300 V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
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Request Quote Now

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