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SQM200N04-1M1L_GE3

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Vishay / Siliconix SQM200N04-1M1L_GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SQM200N04-1M1L_GE3
Description
MOSFET N-CH 40V 200A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SQM200N04-1M1L_GE3 PDF
SQM200N04-1M1L_GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs413 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds20655 pF @ 25 V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
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