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RV4E031RPHZGTCR1

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ROHM Semiconductor RV4E031RPHZGTCR1

Manufacturer :
ROHM Semiconductor
Mfr. Part # :
RV4E031RPHZGTCR1
Description
MOSFET P-CH 30V 3.1A DFN1616-6W
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RV4E031RPHZGTCR1 PDF
RV4E031RPHZGTCR1 Tech Specifications
SeriesAutomotive, AEC-Q101
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs105mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs4.8 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN1616-6W
Package / Case6-PowerWFDFN
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