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TPN2R503NC,L1Q

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Toshiba Electronic Devices and Storage Corporation TPN2R503NC,L1Q

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TPN2R503NC,L1Q
Description
MOSFET N CH 30V 40A 8TSON-ADV
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TPN2R503NC,L1Q PDF
In Stock
965
TPN2R503NC,L1Q Tech Specifications
SeriesU-MOSVIII
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusLast Time Buy
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2230 pF @ 15 V
FET Feature-
Power Dissipation (Max)700mW (Ta), 35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN
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