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SIA456DJ-T3-GE3

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Vishay / Siliconix SIA456DJ-T3-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIA456DJ-T3-GE3
Description
MOSFET N-CH 200V 1.1A/2.6A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIA456DJ-T3-GE3 PDF
In Stock
587
SIA456DJ-T3-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C1.1A (Ta), 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 100 V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6
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