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JANTXV1N5809US

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Roving Networks / Microchip Technology JANTXV1N5809US

Manufacturer :
Roving Networks / Microchip Technology
Mfr. Part # :
JANTXV1N5809US
Description
DIODE GEN PURP 100V 3A B-MELF
Catalog
Diodes - Rectifiers - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
JANTXV1N5809US PDF
JANTXV1N5809US Tech Specifications
SeriesMilitary, MIL-PRF-19500/477
PackageBulk
Part StatusActive
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If875 mV @ 4 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
Current - Reverse Leakage @ Vr5 µA @ 100 V
Capacitance @ Vr, F60pF @ 10V, 1MHz
Mounting TypeSurface Mount
Package / CaseSQ-MELF, B
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 175°C
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