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BCR35PNE6327BTSA1

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IR (Infineon Technologies) BCR35PNE6327BTSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
BCR35PNE6327BTSA1
Description
TRANS NPN/PNP PREBIAS SOT363
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
BCR35PNE6327BTSA1 PDF
In Stock
773
BCR35PNE6327BTSA1 Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusObsolete
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)-
Frequency - Transition150MHz
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-6
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