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SI5513DC-T1-GE3

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Vishay / Siliconix SI5513DC-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI5513DC-T1-GE3
Description
MOSFET N/P-CH 20V 3.1A 1206-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI5513DC-T1-GE3 PDF
In Stock
672
SI5513DC-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.1A, 2.1A
Rds On (Max) @ Id, Vgs75mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™
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Request Quote Now

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