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TPC8212-H(TE12LQ,M

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Toshiba Electronic Devices and Storage Corporation TPC8212-H(TE12LQ,M

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TPC8212-H(TE12LQ,M
Description
MOSFET 2N-CH 30V 6A SOP8
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TPC8212-H(TE12LQ,M PDF
In Stock
293
TPC8212-H(TE12LQ,M Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs21mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds840pF @ 10V
Power - Max450mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-SOP (5.5x6.0)
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Request Quote Now

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