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SI4966DY-T1-GE3

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Vishay / Siliconix SI4966DY-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI4966DY-T1-GE3
Description
MOSFET 2N-CH 20V 8SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI4966DY-T1-GE3 PDF
SI4966DY-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)
Part StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs25mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
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