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SI3529DV-T1-E3

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Vishay / Siliconix SI3529DV-T1-E3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI3529DV-T1-E3
Description
MOSFET N/P-CH 40V 2.5A 6-TSOP
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI3529DV-T1-E3 PDF
In Stock
537
SI3529DV-T1-E3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C2.5A, 1.95A
Rds On (Max) @ Id, Vgs125mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds205pF @ 20V
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
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