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2SA965-Y,T6KOJPF(J

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Toshiba Electronic Devices and Storage Corporation 2SA965-Y,T6KOJPF(J

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
2SA965-Y,T6KOJPF(J
Description
TRANS PNP 800MA 120V TO226-3
Catalog
Transistors - Bipolar (BJT) - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
2SA965-Y,T6KOJPF(J PDF
In Stock
342
2SA965-Y,T6KOJPF(J Tech Specifications
Series-
PackageBulk
Part StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)120 V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 100mA, 5V
Power - Max900 mW
Frequency - Transition120MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageLSTM
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Request Quote Now

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