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BCR112WE6327BTSA1

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IR (Infineon Technologies) BCR112WE6327BTSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
BCR112WE6327BTSA1
Description
TRANS PREBIAS NPN 250MW SOT323-3
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
BCR112WE6327BTSA1 PDF
In Stock
313
BCR112WE6327BTSA1 Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition140 MHz
Power - Max250 mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackagePG-SOT323-3
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