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PDTD113ES,126

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NXP Semiconductors PDTD113ES,126

Manufacturer :
NXP Semiconductors
Mfr. Part # :
PDTD113ES,126
Description
TRANS PREBIAS NPN 500MW TO92-3
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
PDTD113ES,126 PDF
In Stock
939
PDTD113ES,126 Tech Specifications
Series-
PackageTape & Box (TB)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500 mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3
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Request Quote Now

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