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IPI26CN10N G

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IR (Infineon Technologies) IPI26CN10N G

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPI26CN10N G
Description
MOSFET N-CH 100V 35A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPI26CN10N G PDF
IPI26CN10N G Tech Specifications
SeriesOptiMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs26mOhm @ 35A, 10V
Vgs(th) (Max) @ Id4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2070 pF @ 50 V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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Request Quote Now

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