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NVB190N65S3

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Sanyo Semiconductor/ON Semiconductor NVB190N65S3

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
NVB190N65S3
Description
MOSFET N-CH 650V 20A D2PAK-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NVB190N65S3 PDF
In Stock
335
NVB190N65S3 Tech Specifications
SeriesAutomotive, AEC-Q101, SuperFET® III
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1605 pF @ 400 V
FET Feature-
Power Dissipation (Max)162W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK-3 (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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