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IPSH4N03LA G

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IR (Infineon Technologies) IPSH4N03LA G

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPSH4N03LA G
Description
MOSFET N-CH 25V 90A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPSH4N03LA G PDF
In Stock
249
IPSH4N03LA G Tech Specifications
SeriesOptiMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 15 V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak
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