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SI4435DYPBF

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IR (Infineon Technologies) SI4435DYPBF

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
SI4435DYPBF
Description
MOSFET P-CH 30V 8A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI4435DYPBF PDF
In Stock
442
SI4435DYPBF Tech Specifications
SeriesHEXFET®
PackageTube
Part StatusDiscontinued at Digi-Key
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2320 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)
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