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IPB100N06S3-03

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IR (Infineon Technologies) IPB100N06S3-03

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPB100N06S3-03
Description
MOSFET N-CH 55V 100A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB100N06S3-03 PDF
In Stock
429
IPB100N06S3-03 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs480 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds21620 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Request Quote Now

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