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SI1051X-T1-GE3

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Vishay / Siliconix SI1051X-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI1051X-T1-GE3
Description
MOSFET P-CH 8V 1.2A SC89-6
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI1051X-T1-GE3 PDF
In Stock
693
SI1051X-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8 V
Current - Continuous Drain (Id) @ 25°C1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs122mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.45 nC @ 5 V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds560 pF @ 4 V
FET Feature-
Power Dissipation (Max)236mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-6
Package / CaseSOT-563, SOT-666
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Request Quote Now

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