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BSP170PE6327T

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IR (Infineon Technologies) BSP170PE6327T

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
BSP170PE6327T
Description
MOSFET P-CH 60V 1.9A SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
BSP170PE6327T PDF
In Stock
274
BSP170PE6327T Tech Specifications
SeriesSIPMOS®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusDiscontinued at Digi-Key
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds410 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA
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