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IRF6662TR1PBF

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IR (Infineon Technologies) IRF6662TR1PBF

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IRF6662TR1PBF
Description
MOSFET N-CH 100V 8.3A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IRF6662TR1PBF PDF
In Stock
767
IRF6662TR1PBF Tech Specifications
SeriesHEXFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C8.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs22mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1360 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MZ
Package / CaseDirectFET™ Isometric MZ
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