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SIB412DK-T1-GE3

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Vishay / Siliconix SIB412DK-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIB412DK-T1-GE3
Description
MOSFET N-CH 20V 9A PPAK SC75-6
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIB412DK-T1-GE3 PDF
In Stock
700
SIB412DK-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs34mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.16 nC @ 5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds535 pF @ 10 V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-75-6L Single
Package / CasePowerPAK® SC-75-6L
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