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BSB053N03LP G

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IR (Infineon Technologies) BSB053N03LP G

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
BSB053N03LP G
Description
MOSFET N-CH 30V 17A/71A 2WDSON
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
BSB053N03LP G PDF
In Stock
380
BSB053N03LP G Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON
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