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SI4829DY-T1-GE3

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Vishay / Siliconix SI4829DY-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI4829DY-T1-GE3
Description
MOSFET P-CH 20V 2A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI4829DY-T1-GE3 PDF
In Stock
872
SI4829DY-T1-GE3 Tech Specifications
SeriesLITTLE FOOT®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs215mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds210 pF @ 10 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2W (Ta), 3.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)
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