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IPB09N03LAT

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IR (Infineon Technologies) IPB09N03LAT

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPB09N03LAT
Description
MOSFET N-CH 25V 50A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB09N03LAT PDF
IPB09N03LAT Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1642 pF @ 15 V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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