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NP109N055PUJ-E1B-AY

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Renesas Electronics America NP109N055PUJ-E1B-AY

Manufacturer :
Renesas Electronics America
Mfr. Part # :
NP109N055PUJ-E1B-AY
Description
MOSFET N-CH 55V 110A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NP109N055PUJ-E1B-AY PDF
In Stock
283
NP109N055PUJ-E1B-AY Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C110A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10350 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 220W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Request Quote Now

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