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FDB12N50UTM_WS

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Sanyo Semiconductor/ON Semiconductor FDB12N50UTM_WS

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FDB12N50UTM_WS
Description
MOSFET N-CH 500V 10A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDB12N50UTM_WS PDF
In Stock
767
FDB12N50UTM_WS Tech Specifications
SeriesFRFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1395 pF @ 25 V
FET Feature-
Power Dissipation (Max)165W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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