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FQB13N10LTM

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Sanyo Semiconductor/ON Semiconductor FQB13N10LTM

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FQB13N10LTM
Description
MOSFET N-CH 100V 12.8A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQB13N10LTM PDF
In Stock
247
FQB13N10LTM Tech Specifications
SeriesQFET®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs180mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds520 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 65W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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