| Series | HEXFET® | |
| Package | Tube | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55 V | |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-262 | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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