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SI5913DC-T1-GE3

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Vishay / Siliconix SI5913DC-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI5913DC-T1-GE3
Description
MOSFET P-CH 20V 4A 1206-8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI5913DC-T1-GE3 PDF
In Stock
664
SI5913DC-T1-GE3 Tech Specifications
SeriesLITTLE FOOT®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs84mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 10 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.7W (Ta), 3.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package1206-8 ChipFET™
Package / Case8-SMD, Flat Lead
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