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FDS8870_G

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Sanyo Semiconductor/ON Semiconductor FDS8870_G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FDS8870_G
Description
MOSFET N-CH 30V 18A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDS8870_G PDF
In Stock
598
FDS8870_G Tech Specifications
SeriesPowerTrench®
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs112 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4615 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)
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