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SI7703EDN-T1-GE3

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Vishay / Siliconix SI7703EDN-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI7703EDN-T1-GE3
Description
MOSFET P-CH 20V 4.3A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI7703EDN-T1-GE3 PDF
In Stock
455
SI7703EDN-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs48mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id1V @ 800µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8
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