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MVB50P03HDLT4G

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Sanyo Semiconductor/ON Semiconductor MVB50P03HDLT4G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
MVB50P03HDLT4G
Description
MOSFET P-CH 30V 50A D2PAK-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
MVB50P03HDLT4G PDF
In Stock
580
MVB50P03HDLT4G Tech Specifications
SeriesAutomotive, AEC-Q101
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs25mOhm @ 25A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100 nC @ 5 V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds4.9 nF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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