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IPD06P002NSAUMA1

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IR (Infineon Technologies) IPD06P002NSAUMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPD06P002NSAUMA1
Description
MOSFET P-CH 60V 35A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPD06P002NSAUMA1 PDF
In Stock
905
IPD06P002NSAUMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs38mOhm @ 35A, 10V
Vgs(th) (Max) @ Id4V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 30 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-313
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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