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SI5858DU-T1-GE3

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Vishay / Siliconix SI5858DU-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI5858DU-T1-GE3
Description
MOSFET N-CH 20V 6A PPAK CHIPFET
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI5858DU-T1-GE3 PDF
In Stock
650
SI5858DU-T1-GE3 Tech Specifications
SeriesLITTLE FOOT®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs39mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds520 pF @ 10 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2.3W (Ta), 8.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® ChipFet Dual
Package / CasePowerPAK® ChipFET™ Dual
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